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APT29F80J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET
APT29F80J
800V, 29A, 0.21Ω Max, trr ≤370ns
N-Channel FREDFET
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has
been optimized for high reliability in ZVS phase shifted bridge and other circuits
through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate
charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent
niose immunity and low switching loss. The intrinsic gate resistance and ca-
pacitance of the poly-silicon gate structure help control di/dt during switching,
resulting in low EMI and reliable paralleling, even when switching at very high
frequency.
"UL Recognized"
ISOTOP®
file # E145592
APT29F80J
D
G
Single die FREDFET
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Package Weight
Torque Terminals and Mounting Screws.
Ratings
Unit
31
19
A
173
±30
V
1979
mJ
24
A
Min
-55
2500
Typ Max Unit
543
W
0.23
°C/W
0.15
150 °C
V
1.03
oz
29.2
g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com