APT20SCD120B Datasheet, PDF (1/4 Pages) Microsemi Corporation – Zero Recovery Silicon Carbide Schottky Diode

APT20SCD120B
APT20SCD120S
1200V 20A
Zero Recovery Silicon Carbide Schottky Diode
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Power Factor Correction (PFC)
PRODUCT FEATURES
• Zero Recovery Times (trr)
• Popular TO-247 Package or
surface mount D³PAK package
• Low Forward Voltage
• Low Leakage Current
PRODUCT BENEFITS
• Higher Reliability Systems
• Minimizes or eliminates
snubber
T _{O -247}
D³PAK
1
2
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
T_C = 25°C unless otherwise specified.
Ratings
Unit
V_R
V_RRM
V_RWM
I_F
I_FRM
I_FSM
P_tot
T_J, T_STG
T_L
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum D.C. Forward current
T_C = 25°C
T_C = 135°C
Repetitive Peak Forward Suge Current (T_J = 45°C, t_p = 10ms, Half Sine Wave)
Non-Repetitive Forward Surge Current (T_J = 25°C, t_p = 10ms, Half Sine)
Power Dissipation
T_C = 25°C
T_C = 110°C
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
1200
68
20
100
220
208
66
-55 to 150
300
Volts
Amps
W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V_F
Forward Voltage
I_F = 20A T_J = 25°C
I_F = 20A, T_J = 150°C
I_RM
Maximum Reverse Leakage Current
V_R = 1200V T_J = 25°C
V_R = 1200V, T_J = 150°C
Q_c
Total Capactive Charge V_R = 800V, I_F = 20A, di/dt = -100A/μs, T_J = 25°C
Junction Capacitance V_R = 0V, T_J = 25°C, f = 1MHz
C_T
Junction Capacitance V_R = 200V, T_J = 25°C, f = 1MHz
Junction Capacitance V_R = 400V, T_J = 25°C, f = 1MHz
Min Typ Max Unit
1.5
2.2
66
1135
1.8
400
2000
Volts
μA
nC
160
pF
100
Microsemi Website - http://www.microsemi.com