APT17F80B Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET

APT17F80B

APT17F80S
800V, 18A, 0.58Ω Max, t_rr ≤250ns
N-Channel FREDFET
POWER MOS 8^® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced
t_rr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
TO-247
D³PAK
APT17F80B
APT17F80S
D
Single die FREDFET _G
S
FEATURES
•Fast switching with low EMI
•Low t_rr for high reliability
•Ultra low C_rss for improved noise immunity
•Low gate charge
•Avalanche energy rated
•RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
•Half bridge
•PFC and other boost converter
• Buck converter
•Single and two switch forward
•Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat, Greased Surface}
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_L
Soldering Temperature for 10 Seconds (1.6mm from case)
W_T
Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Ratings
Unit
18
11
A
70
±30
V
797
mJ
9
A
Min Typ Max Unit

500
W


0.11
0.25
°C/W
-55

150
°C
300

0.22
oz

6.2
g

10 in·lbf

1.1 N·m
Microsemi Website - http://www.microsemi.com