APT11F80B Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET

APT11F80B
APT11F80S
600V, 12A, 0.9Ω Max trr ≤210ns
N-Channel FREDFET
POWER MOS 8^® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-
TO-247
D³PAK
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced
t_rr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
APT11F80B
APT11F80S
D
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
Single die FREDFET _G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat, Greased Surface}
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_L
Soldering Temperature for 10 Seconds (1.6mm from case)
W_T
Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
Unit
12
8
A
46
±30
V
524
mJ
6
A
Min Typ Max Unit
337
W
0.37
°C/W
0.15
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m