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| APT106N60B2C6 Datasheet, PDF (1/5 Pages) Microsemi Corporation – Super Junction MOSFET | |||
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APT106N60B2C6
600V 106A 0.035Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
⢠Ultra Low RDS(ON)
⢠Low Miller Capacitance
⢠Ultra Low Gate Charge, Qg
⢠Avalanche Energy Rated
⢠Extreme dv/dt Rated
⢠Dual die (parallel)
⢠Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise speciï¬ed.
APT106N60B2C6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C 1
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 2
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 3 ( Id = 18.6A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V )
600
106
68
318
±20
833
-55 - to 150
260
18.6
3.4
2200
Volts
Amps
Volts
Watts
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
600
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 53A)
0.035
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
50
500
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±200
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3.4mA)
2.5
3
3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS⢠comprise a new family of transistors developed by Inï¬neon Technologies AG. "COOLMOS" is a trade-
mark of Inï¬neon Technologies AG."
Microsemi Website - http://www.microsemi.com
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