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| APT102GA60B2 Datasheet, PDF (1/6 Pages) Microsemi Corporation – High Speed PT IGBT | |||
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APT102GA60B2
APT102GA60L
600V
High Speed PT IGBT
APT102GA60B2
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efï¬ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of
the poly-silicone gate structure help control di/dt during switching, resulting in low EMI,
even when switching at high frequency.
APT102GA60L
Single die IGBT
FEATURES
⢠Fast switching with low EMI
⢠Very Low Eoff for maximum efï¬ciency
⢠Ultra low Cres for improved noise immunity
⢠Low conduction loss
⢠Low gate charge
⢠Increased intrinsic gate resistance for low EMI
⢠RoHS compliant
TYPICAL APPLICATIONS
⢠ZVS phase shifted and other full bridge
⢠Half bridge
⢠High power PFC boost
⢠Welding
⢠UPS, solar, and other inverters
⢠High frequency, high efï¬ciency industrial
Absolute Maximum Ratings
Symbol Parameter
Ratings
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TL
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C 1
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 2
Gate-Emitter Voltage 3
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
600
183
102
307
±30
780
307A @ 600V
-55 to 150
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise speciï¬ed
Test Conditions
Min Typ Max
VBR(CES) Collector-Emitter Breakdown Voltage
VCE(on)
Collector-Emitter On Voltage
VGE(th)
Gate Emitter Threshold Voltage
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Thermal and Mechanical Characteristics
VGE = 0V, IC = 250μA
600
VGE = 15V,
IC = 62A
TJ = 25°C
TJ = 125°C
VGE =VCE , IC = 1mA
3
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
2.0
2.5
1.9
4.5
6
1000
5000
±100
Symbol Characteristic
Min Typ Max
RθJC
WT
Torque
Junction to Case Thermal Resistance
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
-
-
0.16
-
5.9
-
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com
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