80143 Datasheet, PDF (1/5 Pages) GHz Technology – 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz

80143
1.0 Watts, 15 Volts, Class A
Linear to 2300MHz
GENERAL DESCRIPTION
The 80143 is a common emitter transistor capable of providing 1.0Watts of Class A, RF
output power to 2300 MHz. This transistor is specifically designed for general Class A
amplifier applications. It utilizes gold metalization and diffused ballasting to provide high
reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C
BV_CES Collector to Emitter Voltage
BV_EBO Emitter to Base Voltage
I_C
Collector Current
Storage Temperature
Operating Junction Temperature
4.5 Watts
50 Volts
3.5 Volts
0.6 Amps
-65 to +200 °C
+200 °C
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL
P_OUT
P_IN
G_P
F_T
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2300 MHz
V_CE = 15V
I_C = 200mA
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
BV_EBO
BV_CES
BV_CEO
h_FE
C_OB
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Output Capacitance
Junction-Case Thermal Resistance
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
TEST CONDITIONS
I_E = 2 mA
I_C = 20 mA
I_C = 20 mA
I_C = 200 mA, V_CE = 5 V
F = 1MHz, V_CB = 28V
MIN
0.1
-
9.0
4.2
-
MIN
3.5
50
20
20
-
-
TYP
-
-
10.0
4.5
-
MAX
-
0.125
-
10:1
UNITS
W
W
dB
GHz
-
TYP
-
-
-
-
3.4
-
MAX
-
-
-
-
-
30
UNITS
V
V
V
-
pF
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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