6101A Datasheet, PDF (1/2 Pages) Microsemi Corporation – Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options

SCOTTSDALE DIVISION
6101A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 16-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the
positive side of the power supply line or to ground (see figure 1). An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
16-PIN Ceramic DIP
FEATURES
APPLICATIONS / BENEFITS
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage V_BR > 75 V at 5 μA
• Low Leakage I_R< 100nA at 40 V
• Low Capacitance C < 4.0 pF
• Switching Speeds less than 10 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6101A for a JANTX screen.
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
• Continuous Forward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25^oC
• 600 mW Power Dissipation per Package @ 25^oC (Note 4)
• Operating Junction Temperature range –65 to +150^oC
• Storage Temperature range of –65 to +150^oC
• 16-PIN Ceramic DIP
• Weight 2.09 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of
package
• Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: P_W = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/^oC above +25^oC
NOTE 4: Derate at 4.8 mW/^oC above +25^oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified
PART
NUMBER
6101A
MAXIMUM
FORWARD
VOLTAGE
V_F1
I_F = 100 mA
(Note 1)
V
1
MAXIMUM
REVERSE
CURRENT
I_R1
V_R = 40 V
µA
0.1
MAXIMUM
REVERSE
CURRENT
I_R2
V_R = 20 V
nA
25
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C_t
V_R = 0 V
F = 1 MHz
pF
4.0
MAXIMUM
FORWARD
RECOVERY
TIME
t_fr
I_F = 100 mA
ns
15
MAXIMUM
REVERSE
RECOVERY TIME
trr
I_F = I_R = 10 mAdc
i_rr = 1 mAdc
R_L = 100 ohms
ns
10
NOTE 1: Pulsed: P_W = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
MAXIMUM
FORWARD
VOLTAGE
MATCH
V_F5
I_F = 10 mA
mV
5
Copyright © 2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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