5770A Datasheet, PDF (1/2 Pages) Microsemi Corporation – Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options

SCOTTSDALE DIVISION
5770A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
DESCRIPTION
These low capacitance diode arrays with common anode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to ground (see figure 1). This circuit application is further complimented by the
1N5768 (separate data sheet) that has a common cathode. An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
10-PIN Ceramic
Flat Pack
FEATURES
• Hermetic Ceramic Package
• Isolated Diodes To Eliminate Cross-Talk Voltages
• High Breakdown Voltage V_BR > 60 V at 10 μA
• Low Leakage I_R< 100nA at 40 V
• Low Capacitance C < 8.0 pF
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX5770A for a JANTX screen.
MAXIMUM RATINGS
• V_BR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
• I_O Continuous Forward Current 300 mA (Notes 1 & 3)
• I_FSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
• 400 mW Power Dissipation per Junction @ 25^oC
• 500 mW Power Dissipation per Package @ 25^oC (Note 4)
• Operating Junction Temperature range –65 to +150^oC
• Storage Temperature range of –65 to +150^oC
NOTE 1: Each Diode
NOTE 2: Pulsed: P_W = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/^oC above +25^oC
NOTE 4: Derate at 4.0 mW/^oC above +25^oC
APPLICATIONS / BENEFITS
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20 μs
MECHANICAL AND PACKAGING
• 10-PIN Ceramic Flat Pack
• Weight 0.25 grams (approximate)
• Marking: Logo, part number, date code and dot
identifying pin #1
• Carrier Tubes; 19 pcs (standard)
PART
NUMBER
MAXIMUM
FORWARD
VOLTAGE
V_F1
I_F = 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
I_R1
V_R = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C_t
V_R = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
t_fr
I_F = 500 mA
Vdc
μAdc
pF
ns
5770A
1
0.1
8.0
40
NOTE 1: Pulsed: P_W = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
MAXIMUM
REVERSE
RECOVERY TIME
trr
I_F = I_R = 200 mA
i_rr = 20 mA
R_L = 100 ohms
ns
20
Copyright © 2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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