3134-65M Datasheet, PDF (1/4 Pages) Microsemi Corporation – 65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz

3134-65M Rev B
3134-65M
65Watts, 34 Volts, 200us, 10%
Radar 3100-3400 MHz
GENERAL DESCRIPTION
The 3134-65M is an internally matched, COMMON BASE bipolar transistor
capable of providing 65Watts of pulsed RF output power at 200us pulse width,
10% duty factor across the 3100 to 3400 MHz band. This ceramic sealed
transistor is specifically designed for S-band radar applications. It utilizes gold
metallization and emitter ballasting to provide high reliability and supreme
ruggedness.
CASE OUTLINE
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Peak Collector Current (I_c)
65 V
3.0 V
7A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_g
η_c
R_l
VSWR-S
VSWR-T
Power Output
Power Gain
Collector Efficiency
Return Loss
Load Mismatch Stability
Load Mismatch Tolerance
F=3100-3400 MHz
Pulse Width = 200us
Duty Factor = 10 %
Power Input = 10.3W
Vcc = +34V
F = 3100, 3300, 3400 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
Ices
BV_ces
θjc¹
Collector to Emitter Leakage Vce=36V
Collector to Emitter Breakdown Ic = 30 mA
Thermal Resistance
MIN TYP MAX UNITS
65 70
W
8.0 8.5
dB
45
%
-7
dB
1.5:1
2.0:1
5
mA
65
V
0.5 °C/W
Typical Test Data:
Frequency
Pin (W)
3100 MHz
10
3200 MHz
10
3300 MHz
10
3400 MHz
10
Pout (W)
72
78
77
72
Ic (A)
0.49
0.51
0.47
0.43
RL (dB) Nc (%)
-10
44
-18
45
-19
48
-18
49
G (dB)
8.6
8.9
8.8
8.5
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.