3134-100 Datasheet, PDF (1/5 Pages) Microsemi Corporation – 100 Watts, 36 Volts, 100μs, 10% Radar 3100-3400 MHz

3134-100R1
3134-100
100 Watts, 36 Volts, 100µs, 10%
Radar 3100-3400 MHz
GENERAL DESCRIPTION
The 3134-100 is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 100µsõ pulse
width, 10% duty factor across the 3100 to 3400 MHz band. This hermetically
solder-sealed transistor is specifically designed for S-band radar applications. It
utilizes gold metallization and emitter ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
570 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
65 V
3.0 V
17 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
CASE OUTLINE
55KS-1
Common Base
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P_out
Gain
η_c
Droop
IRL
VSWR-S
VSWR-T
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Droop
Input Return Loss
Stability
Survivability
TEST CONDITIONS
F=3100-3400 MHz
Vcc = 36V
Pulse Width = 100 us
Duty Cycle = 10%
Pin = 16W
MIN
100
8.0
40
1.5:1
2.0:1
TYP
MAX
135
9.3
0.5
-7
UNITS
W
%
dB
dB
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL
BV_ebo
BV_ces
Ices
θjc
Tstg
CHARACTERISTICS
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Storage Temperature
TEST CONDITIONS
Ie = 30 mA
Ic = 120 mA
Vce = 36 V
MIN
3.0
65
-65
TYP
MAX
7
0.35
200
UNITS
V
V
mA
°C/W
°C
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