2N7372_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP POWER SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
PNP POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/612
DEVICES
2N7372
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T_A = +25°C ⁽¹⁾
@ T_C = +25°C ⁽²⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
Value
80
100
5.5
5.0
4.0
58
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
T_j , T_stg
R_θJC
-65 to +200
3
1) Derate linearly 22.8mW/°C for T_A > 25°C
2) Derate linearly 331mW/°C for T_C > 25°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100mAdc
Symbol
Min.
Max.
V_(BR)CEO
80
Collector-Emitter Cutoff Current
V_CE = 60Vdc, V_BE = 0Vdc
V_CE = 100Vdc, V_BE = 0Vdc
I_CES1
I_CES2
1.0
1.0
Collector-Emitter Cutoff Current
V_CE = 40Vdc, I_B = 0
I_CEO
50
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
V_EB = 5.5Vdc
I_EBO1
I_EBO2
1.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
Unit
Vdc
µAdc
mAdc
µAdc
µAdc
mAdc
TO-254AA
PIN 1 = BASE
PIN 2 = COLLECTOR
PIN 3 = EMITTER
T4-LDS-0045 Rev. 1 (072805)
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