2N7371 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/623
Devices
Qualified Level
2N7371
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +25⁰C ⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.667 W/⁰C above TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
Value
100
100
5.0
0.2
12
100
-65 to +175
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Symbol
R_θJC
Max.
1.5
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
Collector-Emitter Cutoff Current
V_CEO(_sus)
V_CE = 50 Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 100 Vdc, V_BE = 1.5 Vdc
I_CEX
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
TO-254AA*
*See Appendix A for
package outline
Min. Max.
Unit
100
Vdc
1.0
mAdc
0.5
mAdc
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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