2N7368JAN Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/622
Devices
2N7368
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 25⁰C ⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.657 W/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
Value
80
80
7.0
4.0
10
115
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Symbol
R_θJC
Max.
1.5
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 0.2 Adc
Collector-Emitter Cutoff Current
V_CEO(_sus)
V_CE = 70 Vdc
I_CES
Collector-Emitter Cutoff Current
V_CE = 80 Vdc, V_BE = 1.5 Vdc
I_CEX
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
TO-254*
*See appendix A for
package outline
Min. Max.
Unit
80
Vdc
1.0
mAdc
1.0
mAdc
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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