2N720A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE GENERAL PURPOSE

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol All Devices
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (RBE = 10 Ω)
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
V_CEO
V_CBO
V_EBO
V_CER
IC
P_T
80
120
7.0
100
500
2N720A 2N1893, S
0.5
0.8
1.8
3.0
Operating & Storage Junction Temperature Range
T_J, T_srg
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
R_θJC
97
58
1) Derate linearly 2.86 mW/⁰C for 2N720A, 4.57 mW/⁰C for 2N1893, S TA > 25⁰C
2) Derate linearly 10.3 mW/⁰C for 2N720A, 17.2 mW/⁰C for 2N1893, S TC > 25⁰C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 30 mAdc
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc, R_BE = 10 Ω
V(BR)_CER
Collector-Base Cutoff Current
V_CB = 120 Vdc
I_CBO
V_CB = 90 Vdc
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
V_EB = 5.0 Vdc
Units
Vdc
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)*
2N720A
W
0_C
Unit
0_C/W
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
Min. Max.
Unit
80
Vdc
Vdc
100
µAdc
10
ηAdc
10
µAdc
10
10
ηAdc
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