2N718A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Small Signal General Purpose Amplifiers

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
2N718A
2N1613
2N1613L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
2N718A
2N1613, L
2N718A
2N1613, L
V_CEO
V_CBO
V_EBO
I_C
P_T
30
Vdc
75
Vdc
7.0
Vdc _{TO-18 (TO-206AA)*}
500
mAdc _2N718A
0.5
0.8
W
1.8
3.0
Operating & Storage Junction Temperature Range
T_J, T_stg
-55 to +175 ⁰C
TO-39 (TO-205AD)*
THERMAL CHARACTERISTICS
2N1613
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N718A
R_θJC
97
0_C/W
2N1613, L
58
1) Derate linearly 4.57 mW/⁰C for 2N1613, L and 2.85 mW/⁰C for 2N718A for TA > +25⁰C
2) Derate linearly 17.2 mW/⁰C for 2N1613, L and 10.3 mW/⁰C for 2N718A for TC > +25⁰C
TO-5*
2N1613L
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
*See appendix A for package
outline
Min. Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 30 mAdc
Collector-Emitter Breakdown Voltage
V_(BR)CEO
30
Vdc
I_C = 10 mAdc, RBE = 10 Ω
Collector-Base Cutoff Current
V_(BR)CER
50
Vdc
V_CB= 60 Vdc
Emitter-Base Cutoff Current
I_CBO
10
ηAdc
V_EB = 5.0 Vdc
I_EBO
10
ηAdc
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