2N6989_1 Datasheet, PDF (1/7 Pages) Microsemi Corporation – MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: [phone] Fax: [phone]
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE
AND FLATPACK SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
DEVICES
2N6989
2N6990
2N6989U
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage ⁽³⁾
V_CEO
50
Collector-Base Voltage ⁽³⁾
V_CBO
75
Emitter-Base Voltage ⁽³⁾
V_EBO
6.0
Collector Current ⁽³⁾
Total Power Dissipation
@ T_A = +25°C
I_C
800
2N6989 ⁽²⁾
1.5
2N6989U ⁽²⁾
P_D
1.0
2N6990 ⁽²⁾
1.0
Operating & Storage Junction Temperature Range
T_op, T_stg
-65 to +200
Note:
1.
2.
3.
4.
Maximum voltage between transistors shall be ≥ 500Vdc.
For derating, see figures 6, 7, 8 and 9. Ratings apply to total package.
For thermal impedance curves, see figures 10, 11, 12 and 13.
Ratings apply to each transistor in the array.
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Base Cutoff Current
V_CB = 60Vdc
V_CB = 75Vdc
V_CB = 60Vdc, T_A = +150°C
Symbol Min. Max.
V_(BR)CEO
50
I_CBO
10
10
10
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
V_EB = 6.0Vdc
I_EBO
10
10
Unit
Vdc
ηAdc
μAdc
μAdc
μAdc
ηAdc
TO-116 – 2N6989
20 PIN LEADLESS
2N6989U
14 PIN FLAT PACK
2N6990
T4-LDS-0177 Rev. 1 (101229)
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