2N6989 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Type 2N6989 Geometry 0400 Polarity NPN

TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
2N6989
2N6989U
2N6990
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS ⁽¹⁾
Ratings
Collector-Emitter Voltage ⁽³⁾
Collector-Base Voltage ⁽³⁾
Emitter-Base Voltage ⁽³⁾
Collector Current ⁽³⁾
Total Power Dissipation
@ TA = +25⁰C
2N6989⁽²⁾
2N6989U⁽²⁾
2N6990⁽²⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
Value
50
75
6.0
800
1.5
1.0
0.4
Operating & Storage Junction Temperature Range
T_op, T_stg ^{-65 to +200}
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/⁰C above TA = +25⁰C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/⁰C above TA = +25⁰C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
Units
Vdc
Vdc
Vdc
mAdc
W
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Collector-Base Cutoff Current
V(BR)_CEO
V_CB = 60 Vdc
I_CBO
V_CB = 75 Vdc; I_c= 10 µAdc
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
I_EBO
V_EB = 6.0Vdc; I_c= 10 µAdc
TO- 116*
2N6989
20 PIN LEADLESS*
2N6989U
14 PIN FLAT PACK*
2N6990
*See appendix A for package
outline
Min. Max.
Unit
50
Vdc
10
ηAdc
10
µAdc
10
ηAdc
10
µAdc
6 Lake Street, Lawrence, MA 01841
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