2N6901 Datasheet, PDF (1/3 Pages) Microsemi Corporation – N-CHANNEL LOGIC LEVEL MOSFET

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
DEVICES
N-CHANNEL LOGIC LEVEL MOSFET
Qualified per MIL-PRF-19500/570
2N6901
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
V_DS
100
Vdc
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
T_C = +25°C
T_C = +100°C
Drain to Source On State Resistance
V_GS
± 10
Vdc
I_D1
1.69
Adc
I_D2
P_tl
R_ds(on)
1.07
8.33 ⁽¹⁾
1.4 ⁽²⁾
Adc
W
Ω
Operating & Storage Temperature
T_op, T_stg
-55 to +150
°C
Note: (1) Derated Linearly by 0.067 W/°C for T_C > +25°C
(2) V_GS = 5Vdc, I_D = 1.07A
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min.
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V_GS = 0V, I_D = -1mAdc
Gate-Source Voltage (Threshold)
V_DS ≥ V_GS, I_D = 1.0mA
V_DS ≥ V_GS, I_D = 1.0mA, T_j = +125°C
V_DS ≥ V_GS, I_D = 1.0mA, T_j = -55°C
Gate Current
V_GS = ±10V, V_DS = 0V
V_GS = ±10V, V_DS = 0V, T_j = +125°C
Drain Current
V_GS = 0V, V_DS = 80V
V_GS = 0V, V_DS = 80V, T_j = +125°C
Static Drain-Source On-State Resistance
V_GS = 5V, I_D = 1.07A pulsed
V_(BR)DSS
100
V_GS(th)1
1.0
V_GS(th)2
0.5
V_GS(th)3
I_GSS1
I_GSS2
I_DSS1
I_DSS2
r_DS(on)1
Max.
2.0
3.0
±100
±200
1.0
50.0
1.4
Unit
Vdc
Vdc
nAdc
µAdc
uAdc
Ω
T_j = -125°C
V_GS = 5V, I_D = 1.07A pulsed
Diode Forward Voltage
V_GS = 0V, I_D = 1.69A pulsed
r_DS(on)2
2.6
Ω
V_SD
0.8 1.6 Vdc
T4-LDS-0188 Rev. 1 (101985)
2N6901
TO-205AF
(formerly TO-39)
SEE FIGURE 1
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