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| 2N6804 Datasheet, PDF (1/3 Pages) Microsemi Corporation – P-CHANNEL MOSFET | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
DEVICES
2N6804
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain â Source Voltage
VDS
-100
Vdc
Gate â Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
TC = +25°C
TC = +100°C
TC = +25°C
Drain to Source On State Resistance
VGS
± 20
Vdc
ID1
-11
Adc
ID2
Ptl
Rds(on)
-7
75 (1)
0.3 (2)
Adc
W
Ω
Operating & Storage Temperature
Top, Tstg -55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = -7A
2N6804
TO-204AA (TO-3)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ⥠VGS, ID = -0.25mA
VDS ⥠VGS, ID = -0.25mA, Tj = +125°C
VDS ⥠VGS, ID = -0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = -10V, ID = -7A pulsed
VGS = -10V, ID = -11A pulsed
Tj = +125°C
VGS = -10V, ID = -7A pulsed
Diode Forward Voltage
VGS = 0V, ID = -11A pulsed
V(BR)DSS -100
Vdc
VGS(th)1 -2.0 -4.0 Vdc
VGS(th)2 -1.0
VGS(th)3
-5.0
IGSS1
IGSS2
IDSS1
IDSS2
±100 nAdc
±200
-25 µAdc
-0.25 mAdc
rDS(on)1
rDS(on)2
rDS(on)3
VSD
0.3
Ω
0.36 Ω
0.55 Ω
-4.7 Vdc
T4-LDS-0113 Rev. 2 (101520)
Page 1 of 3
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