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| 2N6798 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DEVICES
2N6798 2N6798U
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Drain â Source Voltage
Gate â Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
TC = +25°C
TC = +100°C
VDS
VGS
ID1
ID2
Ptl
Rds(on)
Top, Tstg
200
± 20
5.5
3.5
25 (1)
0.4 (2)
-55 to +150
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3.5A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Symbol
V(BR)DSS
Min.
200
Max.
Gate-Source Voltage (Threshold)
VDS ⥠VGS, ID = 0.25mA
VDS ⥠VGS, ID = 0.25mA, Tj = +125°C
VDS ⥠VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
2.0
4.0
VGS(th)2
1.0
VGS(th)3
5.0
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 160V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3.5A pulsed
VGS = 10V, ID = 5.5A pulsed
Tj = +125°C
VGS = 10V, ID = 3.5A pulsed
Diode Forward Voltage
VGS = 0V, ID = 8.0A pulsed
T4-LDS-0049 Rev. 1 (072807)
IGSS1
IGSS2
IDSS1
IDSS2
rDS(on)1
rDS(on)2
rDS(on)3
VSD
±100
±200
25
0.25
0.4
0.42
0.75
1.4
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
Unit
Vdc
Vdc
nAdc
µAdc
mAdc
Ω
Ω
Ω
Vdc
TO-205AF
(formerly TO-39)
U â 18 LCC
Page 1 of 2
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