2N6788 Datasheet, PDF (1/4 Pages) Seme LAB – N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DEVICES
2N6788 2N6788U
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol Value
Unit
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
T_C = +25°C
Continuous Drain Current
T_C = +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
2N6788
2N3788U
2N6788
2N3788U
2N6788
2N3788U
V_DS
100
Vdc
V_GS
± 20
Vdc
I_D1
6.0
4.5
Adc
I_D2
3.5
2.8
Adc
P_tl
20 ⁽¹⁾
14
W
R_ds(on)
0.30 ⁽²⁾
Ω
T_op, T_stg -55 to +150
°C
Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for T_C > +25°C
(2) V_GS = 10Vdc, I_D = 3.5A (2N6788), 2.8A (2N6788U)
TO-205AF
(formerly TO-39)
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V_GS = 0V, I_D = 1mAdc
Gate-Source Voltage (Threshold)
V_DS ≥ V_GS, I_D = 0.25mA
V_DS ≥ V_GS, I_D = 0.25mA, T_j = +125°C
V_DS ≥ V_GS, I_D = 0.25mA, T_j = -55°C
Symbol Min. Max. Unit
V_(BR)DSS 100
Vdc
V_GS(th)1
2.0
V_GS(th)2
1.0
4.0
Vdc
V_GS(th)3
5.0
Gate Current
V_GS = ±20V, V_DS = 0V
V_GS = ±20V, V_DS = 0V, T_j = +125°C
I_GSS1
I_GSS2
±100
±200 ^nAdc
U – 18 LCC
T4-LDS-0164 Rev. 1 (100553)
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