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| 2N6782 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL POWER MOSFET | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/556
DEVICES
2N6782 2N6782U
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Drain â Source Voltage
Gate â Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
TC = +25°C
TC = +100°C
Drain to Source On State Resistance
Operating & Storage Temperature
Note: (1) Derated Linearly by 0.12 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3.5A
VDS
VGS
ID1
ID2
Ptl
Rds(on)
Top, Tstg
Value
Unit
100
Vdc
± 20
Vdc
3.5
Adc
2.25
Adc
15 (1)
W
0.61 (2)
Ω
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ⥠VGS, ID = 0.25mA
VDS ⥠VGS, ID = 0.25mA, Tj = +125°C
VDS ⥠VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 2.25A pulsed
VGS = 10V, ID = 3.5A pulsed
Tj = +125°C
VGS = 10V, ID = 2.25A pulsed
Diode Forward Voltage
VGS = 0V, ID = 3.5A pulsed
Symbol
Min.
Max. Unit
V(BR)DSS
VGS(th)1
VGS(th)2
VGS(th)3
IGSS1
IGSS2
IDSS1
IDSS2
rDS(on)1
rDS(on)2
rDS(on)3
VSD
100
Vdc
2.0
4.0
Vdc
1.0
5.0
±100
±200
nAdc
25
µAdc
0.25 mAdc
0.60
Ω
0.61
Ω
1.08
Ω
1.5
Vdc
T4-LDS-0064 Rev. 1 (081246)
LEVELS
JAN
JANTX
JANTXV
TO-205AF
(formerly TO-39)
U â 18 LCC
Page 1 of 2
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