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| 2N6762_1006 Datasheet, PDF (1/3 Pages) Microsemi Corporation – N-CHANNEL MOSFET | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
DEVICES
2N6762
TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain â Source Voltage
VDS
500
Vdc
Gate â Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
TC = +25°C
TC = +100°C
TC = +25°C
Drain to Source On State Resistance
VGS
±20
Vdc
ID1
4.5
Adc
ID2
Ptl
Rds(on)
3.0
75 (1)
1.5 (2)
Adc
W
Ω
Operating & Storage Temperature
Top, Tstg -55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ⥠VGS, ID = 0.25mA
VDS ⥠VGS, ID = 0.25mA, Tj = +125°C
VDS ⥠VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 400V
VGS = 0V, VDS = 500V, Tj = +125°C
VGS = 0V, VDS = 400V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3A pulsed
VGS = 10V, ID = 4.5A pulsed
VGS = 10V, ID = 3.0A pulsed, Tj = +125°C
Diode Forward Voltage
VGS = 0V, ID = 4.5A pulsed
V(BR)DSS 500
Vdc
VGS(th)1
2.0
VGS(th)2
1.0
VGS(th)3
4.0 Vdc
5.0
IGSS1
IGSS2
IDSS1
IDSS2
IDSS3
rDS(on)1
rDS(on)2
rDS(on)3
VSD
±100 nAdc
±200
25 µAdc
1.0 mAdc
0.25 mAdc
1.5
Ω
1.80 Ω
3.3
Ω
1.4 Vdc
T4-LDS-0151 Rev. 2 (100858)
TO-204AA
(TO-3)
2N6762
Page 1 of 3
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