2N6648 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527
Devices
2N6648
2N6649
2N6650
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6648 2N6649 2N6650 Unit
Collector-Emitter Voltage
V_CEO
-40
-60
-80 Vdc
Collector-Base Voltage
V_CBO
-40
-60
-80 Vdc
Emitter-Base Voltage
V_EBO
-5.0
Vdc
Base Current
IB
-0.25
Adc
Collector Current
I_C
-10
Adc
Total Power Dissipation
@ T_A = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
P_T
5.0
W
85
W
Operating & Storage Junction Temperature Range T_J, T_stg
-65 to +175
0_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
R_θJC
1) Derate linearly 33.3 mW/⁰C for TA > +25⁰C
2) Derate linearly 567 mW/⁰C for TC > +25⁰C
1.76
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N6648
2N6649
V(BR)_CEO
2N6650
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, R_BB = 100 Ω
2N6648
2N6649
V(BR)_CER
2N6650
Collector-Base Cutoff Current
V_CB = -40 Vdc
2N6648
I_CBO
V_CB = -60 Vdc
2N6649
V_CB = -80 Vdc
2N6650
Min.
-40
-60
-80
-40
-60
-80
TO-3* (TO-204AA)
*See Appendix A for
package outline
Max.
Unit
Vdc
Vdc
-1.0
-1.0
mAdc
-1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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