2N6350 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
2N6350
2N6351
2N6352
2N6353
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V_CER
V_CBO
V_EBO
IB
I_C
Total Power Dissipation @ TA = 25⁰C
@ TC = 100⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
P_T
T_J, T_stg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50%
2) Derate linearly @ 5.72 mW/⁰C above TA > 25⁰C
3) Derate linearly @ 50 mW/⁰C above TC > 100⁰C
4) Derate linearly @ 11.4 mW/⁰C above TA > 25⁰C
5) Derate linearly @ 250 mW/⁰C above TC > 100⁰C
2N6350 2N6351
2N6352 2N6353
80
150
80
150
12
6.0
0.5
5.0
10⁽¹⁾
2N6350 2N6352
2N6351
1.0⁽²⁾
5.0⁽³⁾
2N6353
2.0⁽⁴⁾
25⁽⁵⁾
-65 to +200
2N6350 2N6352
2N6351 2N6353
20
4.0
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω
2N6350, 2N6352
2N6351, 2N6353
V(BR)_CER
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
0_C
2N6350, 2N6351
TO-33*
Unit
0_C/W
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
Min. Max.
Unit
80
Vdc
150
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
Page 1 of 2