2N6338 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(25A,200W)

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509
Devices
2N6338
2N6341
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation ⁽¹⁾
@ T_A = +25⁰C
@ T_C = +100⁰C
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
Operating & Storage Junction Temperature Range T_op, T_stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
1) Derate linearly 1.14 W/⁰C for TC = +25⁰C and TC = +200⁰C
2N6338 2N6341
100
150
120
180
6.0
10
25
200
112
-65 to +175
Max.
0.875
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 50 mAdc
2N6338
2N6341
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 50 Vdc
2N6338
I_CEO
V_CE = 75 Vdc
Collector-Emitter Cutoff Current
2N6341
V_CE = 100 Vdc, V_BE = 1.5 Vdc
2N6338
I_CEX
V_CE = 150 Vdc, V_BE = 1.5 Vdc
2N6341
Emitter-Base Cutoff Current
V_EB = 6.0 Vdc
I_EBO
Collector-Base Cutoff Current
V_CB = 120 Vdc
2N6338
I_CEO
V_CB = 180 Vdc
2N6341
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
100
Vdc
150
50
µAdc
10
µAdc
10
100
µAdc
10
µAdc
10
120101
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