2N6306 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/498
Devices
2N6306
2N6308
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6306 2N6308
Collector-Emitter Voltage
V_CEO
250
350
Collector-Base Voltage
V_CBO
500
700
Emitter-Base Voltage
V_EBO
8.0
Collector Current
I_C
8.0
Base Current
I_B
4.0
Total Power Dissipation
@ TC = +25⁰C ⁽¹⁾
@ TC = +100⁰C ⁽¹⁾
P_T
125
62.5
Operating & Storage Temperature Range
Top, T_stg
-65 to +200
1) Between TC = +25⁰C and TC = +175⁰C, linear derating factor average = 0.833 W/⁰C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 100 mAdc
Collector-Emitter Cutoff Current
V_CE = 500 Vdc; VBE = 1.5 Vdc
V_CE = 700 Vdc; VBE = 1.5 Vdc
Collector-Emitter Cutoff Current
V_CE = 250 Vdc
V_CE = 350 Vdc
Emitter-Base Cutoff Current
V_EB = 8 Vdc
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
Symbol
V(BR)_CEO
I_CEX
I_CEO
I_EBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
Min. Max.
Unit
250
Vdc
350
5.0
µAdc
5.0
50
µAdc
50
5.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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