2N6300_1 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN DARLINGTON POWER

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
NPN DARLINGTON POWER
SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
DEVICES
2N6300
2N6301
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol 2N6300 2N6301 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T_C = +0°C ⁽¹⁾
@ T_C = +100°C
V_CEO
V_CBO
V_EBO
I_B
I_C
P_T
60
80
60
80
5.0
120
8.0
75
32
Vdc
Vdc
Vdc
mAdc
Adc
W
Operating & Storage Junction Temperature Range T_j, T_stg
-55 to +200
°C
Note:
1. Derate linearly 0.428W/°C above T_C > 0°C
TO-66 (TO-213AA)
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Voltage
IC = 100mAdc
Collector-Emitter Cutoff Current
V_CE = 30Vdc
V_CB = 40Vdc
Collector-Emitter Cutoff Current
V_CE = 60Vdc, V_BE = -1.5Vdc
V_CE = 80Vdc, V_BE = -1.5Vdc
2N6300
2N6301
2N6300
2N6301
2N6300
2N6301
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
Symbol Min. Max.
V_(BR)CEO
60
80
I_CEO
0.5
0.5
I_CEX
0.5
0.5
I_EBO
2.0
Unit
Vdc
mAdc
mAdc
mAdc
T4-LDS-0171 Rev. 1 (101129)
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