2N6274_1 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514
DEVICES
2N6274 2N6277
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Condition
Symbol 2N6274 2N6277 Unit
Collector-Emitter Voltage
V_CEO
100
150
Vdc
Collector-Base Voltage
V_CBO
120
180
Vdc
Emitter-Base Voltage
V_EBO
6.0
6.0
Vdc
Base Current
I_B
20
20
Adc
Collector Current
Total Power Dissipation
I_C
@ T_C = +25°C ⁽¹⁾
@ T_C = +100°C ⁽²⁾
P_T
50
50
Adc
250
143
W
Operating & Storage Temperature Range
T_j , T_stg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal resistance, Junction-to-Case
Symbol
R_θJC
Max
0.7
Unit
°C/W
Note: 1) Derate linearly 1.43 W/°C between T_C = +25°C and T_C = 200°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS ⁽¹⁾
Symbol Min.
Max.
Collector-Emitter Breakdown Voltage
I_C = 50mAdc
2N6274
V_(BR)CEO
100
2N6277
150
Collector-Emitter Cutoff Current
V_CE = 50Vdc
2N6274
I_CEO
50
V_CE = 75Vdc
2N6277
50
Collector-Emitter Cutoff Current
V_CE = 120Vdc, V_BE = -1.5Vdc
2N6274
I_CEX
10
V_CE = 180Vdc, V_BE = -1.5Vdc
2N6277
10
Collector-Base Cutoff Current
V_CB = 120Vdc
2N6274
I_CBO
10
V_CB = 180Vdc
2N6277
10
Emitter-Base Cutoff Current
V_EB = 6.0Vdc
I_EBO
100
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
TO-3 (TO-204AE)
T4-LDS-0163 Rev. 1 (100546)
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