2N6249 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices
2N6249
2N6250
2N6251
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
JANHC
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Temp Range
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_T
Top, T_stg
2N6249 2N6250 2N6251
200
275
350
300
375
450
6.0
10
5.0
5.5
175
-55 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
R_θJC
1.0
1) Derate linearly at 34.2 mW/⁰C for TA > +25⁰C
2) Derate linearly at 1.0 W/⁰C for TC > +25⁰C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc; L = 42 mH; F = 30-60 Hz
(See Figure 3 of MIL-PRF-19500/510)
2N6249
2N6250
V(BR)_CEO
2N6251
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50Ω
(See Figure 3 of MIL-PRF-19500/510)
2N6249
2N6250
V(BR)_CER
2N6251
Emitter-Base Cutoff Current
V_EB = 6 Vdc
I_EBO
Collector-Emitter Cutoff Current
V_CE = 150 Vdc
V_CE = 225 Vdc
2N6249
2N6250
I_CEO
V_CE = 300 Vdc
2N6251
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
Min. Max.
Unit
200
Vdc
275
350
225
Vdc
300
375
100
µAdc
1.0
mAdc
1.0
1.0
120101
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