2N6232 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SILICON NPN TRANSISTOR

SILICON NPN TRANSISTOR
TECHNICAL DATA
Devices
2N6232
• FAST SWITCHING
• LOW SATURATION VOLTAGE
10 AMP
100 V
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak ⁽¹⁾
Base Current – Continuous
Total Power Dissipation @ T_C = 25⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
(1) Pulse Test: Pulse Width = Duty Cycle < %
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J, T_stg
Value
100
140
7.0
10
1.25
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W/⁰C
0_C
Symbol
R_θJC
Max.
6.67
Unit
0_C/W
TO-5
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage ⁽²⁾
I_C = 100 mAdc, I_B = 0
Collector-Emitter Cutoff Current
V_CEO(sus)
V_CE = 140 Vdc, R_be = 0
I_CES
Collector Cutoff Current
V_CE = 100 Vdc, RBE = 0 Ω, T_C = 150⁰C
I_CES
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc, I_C = 0
I_EBO
Min. Max.
Unit
100
Vdc
0.2
uAdc
0.1
mAdc
10
uAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
10604
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