2N6211 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(2A, 35W)

TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices
2N6211
2N6212
2N6213
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6211 2N6212 2N6213 Unit
Collector-Emitter Voltage
V_CEO
225
300
350 Vdc
Collector-Base Voltage
V_CBO 275
350
400 Vdc
Emitter-Base Voltage
V_EBO
6.0
Vdc
Base Current
IB
1.0
Adc
Collector Current
Total Power Dissipation
I_C
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
P_T
2.0
Adc
3.0
W
35
W
Operating & Storage Temperature
T_op, T_stg
-55 to +200
0_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
R_θJC
1) Derate linearly 17.1 mW/⁰C for TA > +25⁰C
2) Derate linearly 200 mW/⁰C for TC > +25⁰C
5.0
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, f = 30-60 Hz
2N6211
2N6212
V(BR)_CEO
2N6213
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω
2N6211
2N6212
V(BR)_CER
2N6213
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc
2N6211
V(BR)_CEX
2N6212
2N6213
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
225
300
350
250
325
375
275
350
400
TO-66*
(TO-213AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
120101
Page 1 of 2