2N6059 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/502
Devices
2N6058
2N6059
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation⁽¹⁾
@ TC = +25⁰C
@ TC = +100⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly at 1.0 W/⁰C above TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
2N6058 2N6059
80
100
80
100
5.0
0.2
12
150
75
-55 to +175
Symbol
R_θJC
Max.
1.0
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
2N6058
2N6059
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 40 Vdc
2N6058
I_CEO
V_CE = 50 Vdc
Collector-Emitter Cutoff Current
2N6059
V_CE = 80 Vdc, V_BE = 1.5 Vdc
2N6058
I_CEX
V_CE = 100 Vdc, V_BE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6059
V_EB = 5.0 Vdc
I_EBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
80
Vdc
100
1.0
mAdc
1.0
0.5
mAdc
0.5
2.0
mAdc
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