2N5795 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP DUAL SILICON TRANSISTOR

PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
2N5795
2N5796
2N5796U
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CEO
V_CBO
V_EBO
I_C
Total Power Dissipation
@ T_A = +25⁰C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/⁰C for T_A ≥ +25⁰C
2) Derate linearly 3.43 mW/⁰C for T_A ≥ +25⁰C
P_T
T_J, T_stg
Value
60
60
5.0
600
One⁽¹⁾
Section
Both⁽²⁾
Sections
0.5
0.6
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Collector-Base Cutoff Current
V_(BR)CEO
V_CB = 50 Vdc
I_CBO
V_CBO = 60 Vdc
Emitter-Base Cutoff Current
V_EB = 3.0 Vdc
I_EBO
V_EB = 5.0 Vdc
Min.
60
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
Max.
Unit
Vdc
10
ηAdc
10
µAdc
100
ηAdc
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
42203
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