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| 2N5793 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON DUAL TRANSISTOR | |||
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NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495
Devices
2N5793
2N5794
2N5794U
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Value
40
75
6.0
600
One
Section(1)
0.5
Total
Device(2)
0.6
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 75 Vdc
V(BR)CEO
ICBO
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
VEB = 4.0 Vdc
Min.
40
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/495 for
package outline
Max.
Unit
Vdc
10
µAdc
10
ηAdc
10
µAdc
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2
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