2N5685_1 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
DEVICES
2N5685
2N5686
LEVELS
JAN
JANTX
JANTV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol 2N5685 2N5686 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T_C = +25°C ⁽¹⁾
@ T_C = +100°C ⁽¹⁾
Operating & Storage Junction Temperature Range
V_CEO
60
80
Vdc
V_CBO
60
80
Vdc
V_EBO
5.0
5.0
Vdc
I_B
15
15
Adc
I_C
50
50
Adc
P_T
300
171
300
W
171
W
T_J, T_stg
-55 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Thermal Resistance, Junction-to-Case
R_θJC
.0584
Note:
1. Derate linearly 1.715 W/°C between T_C = 25°C and T_C = 200°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Unit
°C/W
Parameters / Test Conditions
OFF CHARACTERTICS ⁽¹⁾
Collector-Emitter Breakdown Voltage
I_C = 100mAdc
Collector-Emitter Cutoff Current
V_CE = 30Vdc
V_CE = 40Vdc
Collector-Emitter Cutoff Current
V_CE = 60Vdc, V_BE = 1.5Vdc
V_CE = 80Vdc, V_BE = 1.5Vdc
Collector-Base Cutoff Current
V_CE = 60Vdc
V_CE = 80Vdc
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
Symbol Min. Max. Unit
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
V_(BR)CEO
I_CEO
I_CEX
I_CBO
I_EBO
60
Vdc
80
500 μAdc
500
10
10
μAdc
2.0
2.0
mAdc
1.0 mAdc
TO-3 (TO-204AE)
T4-LDS-0162 Rev. 1 (100546)
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