2N5681 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN TRANSISTORS

TECHNICAL DATA
NPN POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/583
Devices
2N5681
2N5682
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS (T_{A =} 25°C unless otherwise noted)
Ratings
Symbol 2N5681 2N5682 Units
Collector-Emitter Voltage
V_CEO
100
Collector-Base Voltage
V_CBO
100
Emitter-Base Voltage
V_EBO
4.0
Collector Current
I_C
1.0
Base Current
I_B
0.5
Total Power Dissipation @ TA = +25⁰C⁽¹⁾
@ TC = +25⁰C⁽²⁾
P_T
1.0
10
120
Vdc
120
Vdc
4.0
Vdc
1.0
Adc
0.5
Adc
1.0
W
10
W
Operating & Storage Temperature Range
T_op, T_stg -65 to +200 -65 to +200 °C
THERMAL CHARACTERISTICS
TO-39*
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/⁰C for TA > +25⁰C
2) Derate linearly 57 mW/⁰C for TC > +25⁰C
Symbol
R_θJC
Max.
17.5
Unit
(TO-205AD)
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
Min.
*See appendix A for
package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
2N5681
V(BR)CEO
100
120
Vdc
2N5682
Emitter-Base Cutoff Current
V_EB = 4.0 Vdc
I_EBO
Collector-Emitter Cutoff Current
1.0
µAdc
V_CE = 70 Vdc
2N5681
I_CEO
V_CE = 80 Vdc
2N5682
Collector-Emitter Cutoff Current
10
µAdc
V_BE = 1.5 Vdc
V_CE = 100 Vdc
2N5681
I_CEX
100
nAdc
V_CE = 120 Vdc
2N5682
Collector-Baser Cutoff Current
V_CE = 100 Vdc
V_CE = 120 Vdc
2N5681
I_CBO
2N5682
100
nAdc
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