2N5671 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,140W)

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
2N5671
2N5672
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/⁰C for TA > +25⁰C
2) Derate linearly 800 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_op, T_stg
2N5671 2N5672
90
120
120
150
7.0
10
30
6.0
140
-65 to +200
Symbol
R_θJC
Max.
1.25
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N5671
2N5672
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N5671
2N5672
V(BR)_CER
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N5671
2N5672
V(BR)_CEX
Collector-Emitter Cutoff Current
V_CE = 80 Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 110 Vdc, V_BE = 1.5 Vdc
2N5671
I_CEX
V_CE = 135 Vdc, V_BE = 1.5 Vdc
2N5672
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
90
Vdc
120
110
Vdc
140
120
Vdc
150
10
mAdc
12
mAdc
10
120101
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