2N5660 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices
2N5660
2N5661
2N5662
2N5663
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C
@ TC = +100⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Symbol
Symbol
V_CEO
V_CBO
V_CER
V_EBO
IB
I_C
P_T
T_J, T_stg
2N5660
2N5661
2N5660 2N5661
2N5662 2N5663
200
300
250
400
250
400
6.0
0.5
2.0
2N5660
2N5661
2.0⁽¹⁾
20⁽³⁾
2N5662
2N5663
1.0⁽²⁾
15⁽⁴⁾
-65 to +200
2N5662
2N5663
Thermal Resistance, Junction-to-Case
R_θJC
5.0
Junction-to-Ambient _RθJA
87.5
1) Derate linearly 11.4 mW/⁰C for TA >+ 25⁰C
2) Derate linearly 5.7 mW/⁰C for TA > +25⁰C
3) Derate linearly 200 mW/⁰C for TC > +100⁰C
4) Derate linearly 150 mW/⁰C for TC > +100⁰C
6.67
145.8
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
2N5660, 2N5662
2N5661, 2N5663
V(BR)_CEO
Collector-Base Breakdown Voltage
I_C = 10 mAdc, R_BE = 100Ω
2N5660, 2N5662
2N5661, 2N5663
V(BR)_CER
Emitter-Base Breakdown Voltage
I_E = 10 µAdc
V(BR)_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
Min.
200
300
250
400
6.0
TO-66*
(TO-213AA)
2N5660, 2N5661
TO-5*
2N5662, 2N5663
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
120101
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