2N5114_08 Datasheet, PDF (1/2 Pages) Microsemi Corporation – P-CHANNEL J-FET

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
DEVICES
2N5114
2N5115
2N5116
LEVELS
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol All Devices Unit
Gate-Source Voltage ⁽¹⁾
Drain-Source Voltage ⁽¹⁾
Drain-Gate Voltage
Gate Current
Power Dissipation
T_A = +25°C ⁽²⁾
V_GS
30
Vdc
V_DS
30
Vdc
V_DG
30
Vdc
I_G
50
mAdc
P_T
0.500
W
Storage Temperature Range
T_stg
-65 to +200 °C
(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.
(2) Derate linearly 3.0 mW/°C for T_A > 25°C.
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V_DS = 0, I_G = 1.0 μA dc
Drain-Source “On” State Voltage
V_GS = 0V dc, I_D = -15mA dc
V_GS = 0V dc, I_D = -7.0mA dc
V_GS = 0V dc, I_D = -3.0mA dc
2N5114
2N5115
2N5116
Symbol
V_(BR)GSS
Min.
30
V_DS(on)
Max. Unit
Vdc
-1.3
-0.8
Vdc
-0.6
Gate Reverse Current
V_DS = 0, V_GS = 20V dc
Drain Current Cutoff
V_GS = 12V dc, V_DS = -15V dc
V_GS = 7.0V dc, V_DS = -15V dc
V_GS = 5.0V dc, V_DS = -15V dc
2N5114
2N5115
2N5116
I_GSS
I_D(off)
500 pAdc
-500
-500 pAdc
-500
Zero Gate Voltage Drain Current
V_GS = 0, V_DS = -18V dc
V_GS = 0, V_DS = -15V dc
V_GS = 0, V_DS = -15V dc
2N5114
2N5115
2N5116
-30
-90
I_DSS
-15
-60 mAdc
-5.0
-25
Gate-Source Cutoff
V_DS = -15, I_D = -1.0nA dc
V_DS = -15, I_D = -1.0nA dc
V_DS = -15, I_D = -1.0nA dc
2N5114
2N5115
2N5116
5.0
V_GS(off)
3.0
1.0
10
6.0
Vdc
4.0
TO-18
(TO-206AA)
T4-LDS-0006 Rev. 1 (063387)
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