2N5038 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
2N5038
2N5039
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +25⁰C ⁽¹⁾
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
T_op, T_stg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
1) Derate linearly 800 mW/⁰C for TC > +25⁰C
2N5038 2N5039
90
75
150
125
7.0
5.0
20
140
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Max.
1.25
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N5038
2N5039
V(BR)_CEO
Emitter-Base Breakdown Voltage
I_E = 25 mAdc
Collector-Base Cutoff Current
V(BR)_EBO
V_CE = 150 Vdc
2N5038
I_CBO
V_CE = 125 Vdc
Collector-Base Cutoff Current
2N5039
V_CE = 70 Vdc
2N5038
I_CEO
V_CE = 55 Vdc
2N5039
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
Collector-Emitter Cutoff Current
V_BE = -1.5 Vdc V_CE = 100 Vdc
2N5038
I_CEX
V_BE = -1.5 Vdc V_CE = 85 Vdc
2N5039
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
90
75
7.0
TO-3*
(TO-204AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
1.0
µAdc
1.0
1.0
µAdc
1.0
1.0
µAdc
5.0
µAdc
5.0
120101
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