2N5010 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

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TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
DEVICES
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013S
2N5014S
2N5015S
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Collector-Base Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T_A = +25°C
@ T_C = +25° C
Thermal Resistance, Junction to Case 1/
Operating & Storage Junction Temperature Range
Symbol
V_CER
V_CBO
V_EBO
I_C
I_B
Value
500
600
700
800
900
1000
500
600
700
800
900
1000
5
200
20
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
P_t
R_θJC
T_j, T_stg
1.0
W
7.0
20
°C/W
-65 to +200 °C
Note:
1/ See 19500/727 for Thermal Derating Curves.
TO-5
2N5010 thru 2N5015
TO-39
2N5010S thru 2N5015S
T4-LDS-0067 Rev. 1 (082021)
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