2N4416A Datasheet, PDF (1/2 Pages) Micro Electronics – N-CHANNEL FET

N-CHANNEL J-FET
Qualified per MIL-PRF-19500/428
Devices
2N4416A
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
Parameters / Test Conditions
Symbol 2N4416A
Unit
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
T_A = +25⁰C ⁽¹⁾
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.7 mW/⁰C for T_A > +25⁰C.
V_GS
V_DS
V_DG
I_G
P_T
T_op, T_stg
-35
35
35
10
300
-65 to +200
Vdc
Vdc
Vdc
mAdc
mWdc
0_C
ELECTRICAL CHARACTERISTICS (T_A = +25⁰C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Gate-Source Breakdown Voltage
V_DS = 0, I_G = 1.0 µAdc
Gate Reverse Current
V_(BR)GSS
-35
V_DS = 0, V_GS = 20 Vdc
I_GSS
Drain Current
V_DS = 15 Vdc
I_DSS
5
Gate-Source Voltage
V_DS = 15 Vdc, I_D = 0.5 mAdc
Gate-Source Cutoff Voltage
V_GS
-1
V_DS = 15 Vdc, I_D = 1.0 ηAdc
Gate-Source Forward Voltage
V_DS = 0 Vdc, I_G = 1.0 mAdc
V_GS(off)
V_GSF
-2.5
Max.
-0.1
15
-5.5
-6.0
1
TO-72*
(TO-206AF)
*See appendix A for
package outline
Units
Vdc
ηAdc
mAdc
Vdc
Vdc
Vdc
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