2N4240 Datasheet, PDF (1/3 Pages) Seme LAB – NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• Off-Line Inverters
• Switching Regulators
• Motor Controls
• Deflection Circuits
• DC-DC Converters
• High Voltage Amplifiers
FEATURES:
• High Voltage: 250 to 500V • High Current: 2 Amps
• Fast Switching: t_f < 3µ sec. • Low V_{CE (SAT)}
• High Power: 35 Watts
2N4240
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
V_CBO*
V_CEO*
Collector-Base Voltage
Collector-Emitter Voltage
V_CER*
V_EBO*
Collector-Emitter Voltage R_BE = 50Ω
Emitter-Base Voltage
I_C*
Peak Collector Current
I_C*
Continuous Collector Current
I_B*
Base Current
T_STG*
T_J*
Storage Temperature
Operating Junction Temperature
*
Lead Temperature 1/16" from Case for 10 Sec.
P_T*
θ JC
Power Dissipation
T_C = 25° C
Thermal Impedance
* Indicates JEDEC registered data.
MSC1058.PDF 05-19-99
TO-66
VALUE
500
300
400
6
5
2
1
-65 to 200
-65 to 200
235
35
5.0
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
°C
°C
°C
Watts
° C/W