2N3847 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412
Devices
2N3846
2N3847
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +100⁰C ⁽²⁾
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 26.6 mW/⁰C to +175⁰C
2) Derate linearly 2 W/⁰C to +175⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
Top, T_stg
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc; IB = 0
2N3846
2N3847
Collector-Emitter Cutoff Current
V_CE = 300 Vdc; VBE = 0
2N3846
V_CE = 400 Vdc; VBE = 0
Collector-Emitter Cutoff Current
2N3847
V_CE = 200 Vdc; IB = 0
2N3846
V_CE = 300 Vdc; IB = 0
Emitter-Base Cutoff Current
2N3847
V_BE = 10 Vdc; IC = 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
2N3846 2N3847
200
300
300
400
10
20
4.0
150
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
W
W
0_C
Max.
0.5
Unit
0_C/W
TO-63*
Symbol
*See Appendix A for Package
Outline
Min. Max.
Unit
V(BR)_CEO
I_CES
I_CEO
I_EBO
200
Vdc
300
2
mAdc
2
5
mAdc
5
250
µAdc
120101
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