2N3838 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL

TECHNICAL DATA
NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
TRANSISTOR
Qualified per MIL-PRF-19500/421
Devices
2N3838
2N4854
2N4854U
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N3838⁽²⁾
2N4854, U Unit
Collector-Emitter Voltage
V_CEO
40
40
Vdc
Collector-Base Voltage
V_CBO
60
60
Vdc
Emitter-Base Voltage
V_EBO
5.0
5.0
Vdc
Collector Current
I_C
600
600
mAdc
One Total One Total
Trans Devic Trans Device
e
Total Power Dissipation @ T_A = +25⁰C
@ T_C = + 25⁰C⁽¹⁾
P_T
0.25⁽²⁾ 0.35 0.30⁽³⁾ 0.60
0.7⁽⁴⁾
1.4
1.0⁽⁵⁾
2.0
W
W
Operating & Storage Junction Temp. Range
T_J
200
0_C
Operating & Storage Junction Temp. Range _Tstg
-55 to +200
0_C
Lead to Case Voltage
±120
Vdc
1) T_C rating do not apply to Surface Mount devices (2N4854U)
2) For T_A > +25⁰C Derate linearly 1.43 mW/⁰C (one transistor) 2.00 mW/⁰C (both transistors)
3) For T_A > +25⁰C Derate linearly 1.71 mW/⁰C (one transistor) 3.43 mW/⁰C (both transistors)
4) For T_C > +25⁰C Derate linearly 4.0 mW/⁰C (one transistor) 8.0 mW/⁰C (both transistors)
5) For T_C > +25⁰C Derate linearly 5.71 mW/⁰C (one transistor) 11.43 mW/⁰C (both transistors)
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
Collector-Base Cutoff Current
V_CB = 60 Vdc
Collector-Base Cutoff Current
V_(BR)CEO
I_CBO(1)
V_CB = 50 Vdc
2N3838
2N4854, U
I_CBO(2)
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
V_EB = 3.0 Vdc
Min.
40
TO-78*
2N4854
6 Pin Surface Mount*
2N4854U
6 Lead Flatpack*
2N3838
*See MILPRF19500/421
for package dimensions.
Max.
Unit
Dc
10
µAdc
50
ηAdc
10
10
µAdc
10
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
42103
Page 1 of 2