2N3821 Datasheet, PDF (1/2 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

N-CHANNEL J-FET DEPLETION MODE
Qualified per MIL-PRF-19500/375
Devices
2N3821
2N3822
2N3823
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
TA = +25⁰C ⁽¹⁾
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.7 mW/⁰C for T_A +25 ⁰C.
Symbol
VGSR
VDS
VDG
IGF
PT
Tj, Tstg
2N3821
2N3822 2N3823
50
30
50
30
50
30
10
300
-55 to +200
Unit
V
V
V
mA
mW
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
2N3821, 2N3822
2N3823
V(BR)GSSR
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
VDS = 0, VGS = 20 Vdc
2N3821, 2N3822
2N3823
IGSSR
Zero-Gate-Voltage Drain Current
VGS = 0, VDS = 15 Vdc
2N3821
IDSS
2N3822
2N3823
Gate-Source Voltage
VDS = 15 Vdc, ID = 50 µAdc
2N3821
VDS = 15 Vdc, ID = 200 µAdc
2N3822
VGS
VDS = 15 Vdc, ID = 400 µAdc
2N3823
Gate-Source Cutoff Voltage
VDS = 15 Vdc, ID = 0.5 ηAdc
2N3821
2N3822
VGS(off)
2N3823
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
50
30
0.5
2.0
4.0
0.5
1.0
1.0
TO-72*
(TO-206AF)
*See appendix A for
package outline
Max. Units
Vdc
0.1
ηA
0.5
2.5
10
mA
20
2.0
4.0
Vdc
7.5
4.0
6.0
Vdc
8.0
120101
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