2N3810 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Type 2N3810 Geometry 0220 Polarity PNP

PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336
Devices
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
TECHNICAL DATA
Qualified
Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/⁰C for TA > +25⁰C
2) Derate linearly 3.43 mW/⁰C for TA > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
Value
60
60
5.0
50
One
Both
Section ¹ Sections²
0.5
0.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 10 µAdc
V(BR)_CBO
Collector-Emitter Breakdown Current
I_C = 10 mAdc
V(BR)_CEO
Emitter-Base Breakdown Voltage
I_E = 10 µAdc
V(BR)_EBO
Collector-Base Cutoff Current
V_CB = 50 Vdc
I_CBO
Emitter-Base Cutoff Current
V_EB = 4.0 Vdc
I_EBO
Min.
60
60
5.0
TO-78*
*See appendix A
for package outline
Max.
Unit
Vdc
Vdc
Vdc
10
ηAdc
10
ηAdc
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