2N3791 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +100⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
1) Derate linearly @ 28.57 mW/⁰C for TA > +25⁰C
2) Derate linearly @ 0.857 mW/⁰C for TC > +100⁰C
2N3791 2N3792
60
80
60
80
7.0
4.0
10
5.0
85.7
-65 to +200
Max.
1.17
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
2N3791
2N3792
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 50 Vdc
2N3791
I_CES
V_CE = 70 Vdc
Collector-Emitter Cutoff Current
2N3792
V_CE = 60 Vdc, V_BE = 1.5 Vdc
2N3791
I_CEX
V_CE = 80 Vdc, V_BE = 1.5 Vdc
2N3792
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
Min.
60
80
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
5.0
mAdc
5.0
5.0
mAdc
5.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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